| PART |
Description |
Maker |
| SRD00212Z SRD00212 Q62702-P3010 Q62702-P784 Q62702 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
Ternary PIN Photodiode in TO-Package with Integrated Optics
From old datasheet system
|
SIEMENS A G
Infineon Technologies AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LD271LH LD271 LD271H LD271L |
INFRARD EMITTER
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| TG2216TU |
RF SPDT Switch
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
Toshiba Corporation
|
| Q62703-Q78 LD260 LD262 LD263 LD264 LD265 LD266 LD2 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays 砷化镓红外Lumineszenzdioden - Zeilen砷化镓红外发射器阵列
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| TG2213S |
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
| TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
| SFH415 SFH415-U SFH416-R |
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters
|
Siemens Semiconductor G...
|
| CFK2062-P1 |
800 to 900 MHz 30 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D N |
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
